The process of fabricating conventional single- and polycrystalline silicon PV cells begins very pure semiconductor-grade polysilicon - a material processed from quartz and used extensively throughout the electronics industry. 

The polysilicon is then heated to melting temperature, and trace amounts of boron are added to the melt to create a P-type semiconductor material. Next, an ingot, or block of silicon is formed, commonly using one of two methods: 

1) by growing a pure crystalline silicon ingot from a seed crystal drawn from the molten polysilicon or 

2) by casting the molten polysilicon in a block, creating a polycrystalline silicon material.

 Individual wafers are then sliced from the ingots using wire saws and then subjected to a surface etching process. After the wafers are cleaned, they are placed in a phosphorus diffusion furnace, creating a thin N-type semiconductor layer around the entire outer surface of the cell. 

Next, an anti-reflective coating is applied to the top surface of the cell, and electrical contacts are imprinted on the top (negative) surface of the cell. 

An aluminized conductive material is deposited on the back (positive) surface of each cell, restoring the P-type properties of the back surface by displacing the diffused phosphorus layer. 

Each cell is then electrically tested, sorted based on current output, and electrically connected to other cells to form cell circuits for assembly in PV modules.